Micron has unleashed new flash storage with the up to date UFS 4.0 customary on the cell machine reminiscence market. The OEM asserts that it may double the speeds related to its predecessor, whereas utilizing as much as 25% much less energy. Its “advanced” 3D NAND is backed to assist make next-gen premium up-to-1TB smartphones.
Micron overtly pitches its newest flash modules at successors to units such because the OnePlus 11, Xiaomi 13 Ultra and Motorola Edge Plus 2023, as they conform to the up to date UFS 4.0 necessities for its class. This “the next big thing in mobile storage” incorporates the OEM’s newest market-prepared expertise for specs that may blow its earlier technology away.
The step as much as UFS 4.0 is accompanied by means of 232-layer 3D NAND chips, in comparison with 176 layers in Micron’s UFS 3.1 flash storage. The improve is backed to go at as much as 2x the velocity of its predecessor, with sequential write and skim speeds of as much as 4,000 megabytes per second (MB/s) and 4,300MB/s respectively.
Accordingly, the OEM asserts that its UFS 4.0 reminiscence “delivers best-in-class performance” – as long as the subsequent technology of high-finish smartphones take it up, that’s. These oneday flagships may have as much as 1TB of this “class-leading” flash reminiscence within the close to future.
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Deirdre O Donnell – Senior Tech Writer – 6439 articles revealed on Notebookcheck since 2018
I grew to become an expert author and editor shortly after commencement. My levels are in biomedical sciences; nevertheless, they led to some expertise within the biotech space, which satisfied me of its potential to revolutionize our well being, atmosphere and lives usually. This developed into an all-consuming curiosity in additional elements of tech over time: I can by no means write sufficient on the most recent electronics, devices and improvements. My different pursuits embody imaging, astronomy, and streaming all of the issues. Oh, and low.
Deirdre O’Donnell, 2023-06-24 (Update: 2023-06-24)
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